Analog-centric RFCMOS technology has played an important role in motivating the change of technology from conventional discrete device technology or bipolar IC technology to CMOS technology. However it introduces many problems such as poor performance, susceptibility to PVT fluctuation, and cost increase with technology scaling. The most important advantage of CMOS technology compared with legacy RF technology is that CMOS can use more high performance digital circuits for very low cost. In fact, analog-centric RF-CMOS technology has failed the FM/AM tuner business and the digital-centric CMOS technology is becoming attractive for many users. It has many advantages; such as high performance, no external calibration points, high yield, and low cost. From the above facts, digital-centric CMOS technology which utilizes the advantages of digital technology must be the right path for future RF technology. Further investment in this technology is necessary for the advancement of RF technology.

This paper analyzes a pseudo-differential dynamic comparator with a dynamic pre-amplifier. The transient gain of a dynamic pre-amplifier is derived and applied to equations of the thermal noise and the regeneration time of a comparator. This analysis enhances understanding of the roles of transistor's parameters in pre-amplifier's gain. Based on the calculated gain, two calibration methods are also analyzed. One is calibration of a load capacitance and the other is calibration of a bypass current. The analysis helps designers' estimation for the accuracy of calibration, dead-zone of a comparator with a calibration circuit, and the influence of PVT variation. The analyzed comparator uses 90-nm CMOS technology as an example and each estimation is compared with simulation results.

A method for shortening of the settling time in all digital phase-locked loops is proposed. The method utilizes self monitoring to obtain the parameters necessary for feed-forward compensation. Analysis shows that by employing this technique both fast settling and good stability can be achieved simultaneously. Matlab and Verilog-AMS simulation shows that typical settling speed can be reduced to less than one tenth compared to a system without the feed-forward compensation, by merely employing the feed-forward compensation system. Further more a design example shows that this settling time can be decreased further to less than one fifteenth through design considerations when compared to a speed optimized phase-locked loop design system without direct reference feed-forward compensation.

This paper proposes a dual-conduction class-C VCO for ultra-low supply voltages. Two cross-coupled NMOS pairs with different bias points are employed. These NMOS pairs realize an impulse-like current waveform to improve the phase noise in the low supply conditions. The proposed VCO was implemented in a standard 0.18 µm CMOS technology, which oscillates at a carrier frequency of 4.5 GHz with a 0.2-V supply voltage. The measured phase noise is -104 dBc/Hz@1 MHz-offset with a power consumption of 114 µW, and the FoM is -187 dBc/Hz.

A new digital calibration scheme for a 14 bit binary weighted current-steering digital-to-analog converter (DAC) is presented. This scheme uses a simple current comparator for the current measurement instead of a high-resolution ADC. Therefore, a faster calibration cycle and smaller additional circuits are possible compared to the scheme with the high-resolution ADC. In the proposed calibration scheme, the lowest 8 bit part of the DAC is used for both error correction and normal operation. Therefore, the extra DACs required for calibration are only a 3 bit DAC and a 6 bit DAC. Nevertheless, a large calibration range is achieved. Full 14 bit resolution is achieved with a small chip-area. The simulation results show that DNL and INL after calibration are 0.26 LSB and 0.46 LSB, respectively. They also show that the spurious free dynamic range is 83 dB (57 dB) for signals of 24 kHz (98 MHz) at 200 Msps update rate.

This paper analyzes three passive noise shaping techniques in a SAR ADC. These passive noise shaping techniques can realize 1st and 2nd order noise shaping. These proposed opamp-less noise shaping techniques are realized by charge-redistribution. This means that the proposals maintain the basic architecture and operation principle of a charge-redistribution SAR ADC. Since the proposed techniques work in a passive mode, the proposals have high power efficiency. Meanwhile, the proposed noise shaping SAR ADCs are robust to feature size scaling and power supply reduction. Flicker noise is not introduced into the ADC by passive noise shaping techniques. Therefore, no additional calibration techniques for flicker noise are required. The noise shaping effects of the 1st and 2nd order noise shaping are verified by behavioral simulation results. The relationship between resolution improvement and oversampling rate is also explored in this paper.

This paper introduces a novel Direct Digital Frequency Synthesizer based on Complementary Dual-Phase Latch-Based sequencing method. Compared to conventional Direct Digital Frequency Synthesizer using Flip-Flop as synchronizing element, the proposed architecture allows to double the data sampling rate while trading-off area and Power Efficiency. Digital domain modulations can be easily implemented by using a Direct Digital Frequency Synthesizer. However, due to performance limitations, CMOS-based applications have been almost exclusively restricted to VHF, UHF and L bands. This work aims to increase the operation speed and extend the applicability of this technology to Multi-band Multi-standard wireless systems operating up to 2.7 GHz. The design features a 24 bits pipelined Phase Accumulator and a 14x10 bits Phase to Amplitude Converter. The Phase to Amplitude Converter module is compressed by using Quarter Wave Symmetry technique and is entirely made up of combinational logic inserted into 12 Complementary Dual-Phase Latch-Based pipeline stages. The logic is represented in the form of Sum of Product terms obtained from a 14x10 bits sinusoidal Look-Up-Table. The proposed Direct Digital Frequency Synthesizer is designed and simulated based on 65nm CMOS standard-cell technology. A maximum data sampling rate of 6.8 GS/s is expected. Estimated Spurious Free Dynamic Range and Power Efficiency are 61 dBc and 22 mW/(GS/s) respectively.

Analysis of resonance frequency in shorted transmission lines with inserted capacitor has been made. The analysis shows a resonance frequency dependence on capacitance position on a shorted transmission line. Two analysis methods are presented to predict the resonance frequency and understand how the inserted capacitor affects the resonance frequency of the shorted transmission line. Using this knowledge we propose a new structure for digital controlled oscillators utilizing the capacitance's sensitivity dependence on position of the shorted transmission line to increase the frequency resolution. A 9 GHz transmission line based digital controlled oscillator was designed and fabricated as a proof of concept. Measured results show that more than 100 times frequency step resolution increase is possible utilizing the same tuning capacitor size located at different points on the transmission line.

An experimental latch circuit is fabricated by using a 0.35µm MT-CMOS technology. This latch circuit has a volume smaller by 30%, a delay time shorter by 10%, and has an active power consumption smaller by 10% over those of a conventional MT-CMOS circuit. Furthermore, at a operation frequency of 100 MHz, an SRAM employing this IPS scheme has a standby current which is 0.4% of SRAM's without using IPS scheme.

This paper describes the circuit design and experimental results of a video-rate 10-b analog-to-digital converter (ADC) suitable for consumer video products, such as high-definition TV sets. Triple-stage conversion scheme combined with two new conversion methods, "Dynamic Sliding Reference Method" and "Triangular Interpolation Method," and an internal Bi-CMOS Sample/Hold circuit have been developed. These conversion methods require no adjustment circuit to fit reference voltages between conversion stages and realize small active area. As a result, a maximum conversion frequency of 16 MHz, acceptable SNRs of 56 dB and 48 dB for 10 kHz and 8 MHz input frequency respectively and small DNLE of 0.75 LSB have been achieved. This ADC is fabricated with 1.2 µm Bi-CMOS technology and integrates very small number of bipolar transistors of 2 K on a small active area of 2.52.7 mm2 and consumes 350 mW.

This paper presents three CMOS power amplifiers (PA) which realize wide-tunable output impedance matching. For realization of multi-standard and single-chip transceiver, the prototypes were fabricated by 0.18 µm CMOS process. The proposed PAs can achieve a tunable impedance matching within a wide frequency range by utilizing a resistive feedback and parallel resonator with an inductor and capacitor array. Therefore, the proposed PA has a realization possibility of isolator-less PA which contributes to decrease die area including external component. In other words, the PAs have tunable impedance matching function at their output ends. With a 3.3-V supply, three power amplifiers can cover frequency ranges of 0.9–3.0 GHz, 2.1–5.8 GHz, and 5.7–9.7 GHz, respectively. The PAs realize P1 dB of 21 dBm, Psat of 22 dBm, and PAEpeak of larger than 23%. The proposed PAs present a potential to realize multi-band transceivers without isolators.

RF Variable Gain Amplifiers (RF-VGA) are important components for integrated TV broadcast receivers. Analog and digital controlled RF-VGAs are compared in terms of linearity and an AGC loop architecture suitable for digitally controlled RF-VGA is proposed. Further linearity enhancement applicable for CMOS implementation is also discussed.

We propose a synthesis and automatic layout method for mixed-signal circuits with high regularity. As the first step of this research, a resistive digital-to-analog converter (RDAC) is presented. With a size calculation routine, the area of this RDAC is minimized while satisfying the required matching precision without any optimization loops. We propose to partition the design into slices comprising of both analog and digital cells. These cells are programmed to be synthesized as similar as custom P-Cells based on the calculation above, and automatically laid out to form one slice cell. To synthesize digital circuits, without using digital standard cell library, we propose a versatile unit digital block consisting of 8 transistors. With one or several blocks, the transistors' interconnections are programmed in the units to realize various logic gates. By using this block, the slice shapes are aligned so that the layout space in between the slices are minimized. The proposed mixed-signal slice-based partition facilitates the place-and-route of the whole RDAC. The post-layout simulation shows that the generated 9-bit RDAC achieves 1GHz sampling frequency, -0.11/0.09 and -0.30/0.75 DNL and INL, respectively, 3.57mW power consumption, and 0.0038mm2 active area.

A current mirror circuit is often used in Gm-cells and current amplifiers in order to obtain high linearity and high accurate current gain. However, it is expected that a threshold voltage mismatch between transistors pair in the current mirror affects these performances in recent scaled technologies. In this paper, negative effects caused by the mismatch in the current mirror are considered and a new calibration technique for the mismatch issues is proposed. In the current mirror without the mismatch, the high-linearity operation is provided by distortion canceling under the condition that the transistors have the same operating points. The threshold voltage mismatch disturbs the cancellation, therefore the distortion is appeared. In order to address the issue, a new calibration technique using a backgating effect is considered. This calibration can reduce the threshold voltage mismatch directly by controlling the body bias voltage with DACs. According to simulation results with Monte Carlo sampling in 65nm CMOS process, owing to the proposed calibration, the worst HD2 and HD3 are improved by 18.4dB and 11.6dB, respectively. In addition, the standard deviation of the current gain is reduced from 399mdB to 34mdB.

This paper reviews and discusses a brief history of Nyquist ADCs. Bipolar flash ADCs for early development stage of HDTV and digital oscilloscopes, a Bi-CMOS two-step flash ADC using resistive interpolation for home HDTV receivers, a CMOS two-step flash ADC using capacitive interpolation for handy camcorders, pipelined ADCs using CMOS operational amplifiers, CMOS flash ADCs using dynamic comparator and digital offset compensation, SAR ADCs using low noise dynamic comparators and MOM capacitors, and hybrid ADCs are reviewed.

This paper presents two CMOS power amplifiers which realize frequency band selection. Each PA consists of two stages and uses a transformer to obtain large output power with high efficiency. Furthermore, the capacitive cross-coupling at the second stage reduces a die area of the bypass capacitance. The proposed PAs are fabricated by a 0.18 µm CMOS process. With a 3.3 V supply, the PAs achieve a output 1-dB compression point of larger than 25 dBm from 2.2 GHz to 5.4 GHz, maximum of peak power added efficiency (PAEpeak) are 30% and 27% for 2-band and 3-band PAs, respectively. The proposed PAs have advantages which are a band-selectable ability within a desired frequency range and a realization of CMOS PA with high power efficiency.